inchange semiconductor isc product specification isc silicon npn power transistors mje13070/13071 description collector-emitter sustaining voltage- : v ceo(sus) = 400v(min)- mje13070 = 450v(min)- MJE13071 collector-emitter saturation voltage- : v ce(sat) = 3.0v(min)@i c = 5a applications designed for high-voltage, high-speed, power switching in inductive circuits, where fall ti me is critical.they are partic- ularly suited for line-opera ted switchmode applications su- ch as switching regulators , inverters , dc-dc converter, motor controls, solenoid dr ive and deflection circuits. absolute maximum ratings(t a =25 ) symbol parameter value unit mje13070 650 v cev collector-emitter voltage MJE13071 750 v mje13070 400 v ceo collector-emitter voltage MJE13071 450 v v ebo emitter-base voltage 6 v i c collector current-continuous 5 a i cm collector current-peak 8 a i b b base current 2 a p c collector power dissipation @ t c =25 80 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.56 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistors mje13070/13071 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit mje13070 400 v (br)ceo collector-emitter breakdown voltage MJE13071 i c = 0.1a ;i b = 0 b 450 v v ce( sat )-1 collector-emitter saturation voltage i c = 3a; i b = 0.6a b i c = 3a; i b = 0.6a;t b c =100 1.0 2.0 v v ce( sat )-2 collector-emitter saturation voltage i c = 5a; i b = 1a b 3.0 v v be( sat ) base-emitter saturation voltage i c = 3a; i b = 0.6a b i c = 3a; i b = 0.6a;t b c =100 1.5 1.5 v i cev collector cutoff current v cev =rated value;v be( off ) = 1.5v v cev =rated value;v be( off ) =1.5v;t c =100 0.5 2.5 ma i ebo emitter cutoff current v eb = 6v; i c =0 1.0 ma h fe dc current gain i c = 3a ; v ce = 5v 8 c ob output capacitance i e = 0; v cb = 10v, f test = 1.0khz 250 pf switching times t d delay time 0.05 s t r rise time 0.4 s t stg storage time 1.5 s t f fall time i c = 3a; i b1 = 0.4a;v be( off ) = 5v; v cc = 250v; t p = 30 s,duty cycle 1% 0.5 s isc website www.iscsemi.cn 2
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